WFP830B Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr Silicon N-Channel MOSFET Features - - - - - 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp...