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WFU2N60 - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Features

  • 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 15.3nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFU2N60 Silicon N-Channel MOSFET General.

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Datasheet preview – WFU2N60

Datasheet Details

Part number WFU2N60
Manufacturer Winsemi
File Size 555.50 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU2N60 Datasheet
Additional preview pages of the WFU2N60 datasheet.

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Full PDF Text Transcription

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Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 15.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFU2N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS.
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