Wisdom technologies WFU2N60
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFU2N60 |
|---|---|
| Datasheet | WFU2N60 Download |
| Manufacturer |  Wisdom technologies |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain
● 1. Gate { ▲
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● { 3. Source
GENERAL DESCRIPTION
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D-PAK, I-PAK 2 1 3 1 2 3ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 1.8 1.1 6.0 Units V A A A V...
