WFU2N60B Datasheet | Winsemi

Datasheet pdf - http://..net/ .DataSheet.co.kr B WFU2N60 WFU2N60B Silicon N-Channel MOSFET Features - - - - - 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply...