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WFU2N60B - Silicon N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Features

  • 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFU2N60B
Manufacturer Winsemi
File Size 604.30 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFU2N60B Datasheet
Additional preview pages of the WFU2N60B datasheet.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr B WFU2N60 WFU2N60B Silicon N-Channel MOSFET Features � � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
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