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WFW20N60W - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerC

Features

  • 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFW20N60W
Manufacturer Winsemi
File Size 340.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW20N60W Datasheet

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr W20N60W WF WFW Silicon N-Channel MOSFET Features � � � � � 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
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