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WSP8212 - Dual N-Channel MOSFET

Datasheet Summary

Description

The WSP8212 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSP8212 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 10mΩ ID 11A.

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Datasheet Details

Part number WSP8212
Manufacturer Winsok
File Size 789.99 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WSP8212 Datasheet
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Full PDF Text Transcription

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General Description The WSP8212 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSP8212 meet the RoHS and Green Product requirement with full function reliability approved.
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