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General Description
The WSP9926 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WSP9926 meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available z ESD:2KV
WSP9926
Dual N-Channel MOSFET
Product Summery
BVDSS 20V
RDSON 22mΩ
ID 7.