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WFF1N60 - N-Channel MOSFET

Key Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge :Qg= 5nC (Typ. ).
  • BVDSS=600V,ID=1A.
  • RDS(on) : 11.5Ω (Max) @VG=10V.
  • 100% Avalanche Tested GD S D ! G!.
  • ◀▲.
  • ! S   TO‐220F    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Curr.

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Datasheet Details

Part number WFF1N60
Manufacturer Wisdom technologies
File Size 1.54 MB
Description N-Channel MOSFET
Datasheet download datasheet WFF1N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH VOLTAGE N-Channel MOSFET      WFF1 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 5nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 11.