WFN1N70 - N-Channel MOSFET

Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

RDS(on) (Max 14.0 Ω )@VGS=10V.
Gate Charge (Typical 5.0nC).
Improved dv/dt Capability, High Ruggedness.
100% Avalanche Tested.
Maximum Junction Temperature Range (150°C) General.

Wisdom technologies

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Datasheet Details

Part number	WFN1N70
Manufacturer	Wisdom technologies
File Size	747.91 KB
Description	N-Channel MOSFET
Datasheet	WFN1N70 Datasheet
Additional preview pages of the WFN1N70 datasheet.

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PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3.

Published: Feb 1, 2016 |