Wisdom technologies WFN1N70
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFN1N70 |
|---|---|
| Datasheet | WFN1N70 Download |
| Manufacturer |  Wisdom technologies |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) (Max 14.0 Ω )@VGS=10V● Gate Charge (Typical 5.0nC)
● Improved dv/dt Capability, High Ruggedness
● 100% Avalanche Tested
● Maximum Junction Temperature Range (150°C)
GENERAL DESCRIPTION
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Symbol 1. Gate{ { 2. Drain● ◀▲
●
● { 3. Source TO-92
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJL RθJA Parameter Thermal Resist...
