Datasheet Summary
PRELIMILARY
Wisdom Semiconductor
N-Channel MOSFET
Features
- RDS(on) (Max 14.0 Ω )@VGS=10V
- Gate Charge (Typical 5.0nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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{ 2. Drain
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