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C2M1000170J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • TAB Drain Drain (TAB).
  • High Blocking Voltage with Low RDS(on).
  • Easy to Parallel and Simple to Drive.
  • Low parasitic inductance.
  • Low impedance package.
  • Separate driver source pin.
  • Ultra-low Drain-gate capacitance.
  • Halogen Free, RoHS Compliant.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power So.

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Datasheet Details

Part number C2M1000170J
Manufacturer Wolfspeed
File Size 768.96 KB
Description Silicon Carbide Power MOSFET
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C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Low parasitic inductance • Low impedance package • Separate driver source pin • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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