C2M1000170J Description
C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode.
C2M1000170J Key Features
- High Blocking Voltage with Low RDS(on)
- Easy to Parallel and Simple to Drive
- Low parasitic inductance
- Low impedance package
- Separate driver source pin
- Ultra-low Drain-gate capacitance
- Halogen Free, RoHS pliant
- Fast intrinsic diode with low reverse recovery (Qrr)
- Wide creepage (~7mm) between drain and source