Full PDF Text Transcription for C2M1000170J (Reference)
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C2M1000170J. For precise diagrams, and layout, please refer to the original PDF.
C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features TAB Drain Drain (TAB) • High Blocking Voltage with Low ...
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Mode Features TAB Drain Drain (TAB) • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Low parasitic inductance • Low impedance package • Separate driver source pin • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
C2M1000170J Datasheet
