C3D06060A Datasheet Text
C3D06060A
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Features
- Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
- Zero Reverse Recovery Current / Forward
Recovery Voltage
- Temperature-Independent Switching Behavior
Package Types: TO-220-2 Marking: C3D06060A
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current
Power Dissipation
Symbol VRRM VDC IF
IFRM IFSM IF,Max Ptot
Value 600 600 19 9 6 30 20 63 49 540 460 88 38
Unit
Test Conditions
V
TJ = 25 °C
TJ = 135 °C
TJ = 154 °C
TC = 25 °C, tp = 10 ms, Half Sine Wave...
