C3D06060F Datasheet Text
C3D06060F
3rd Generation 600 V, 6 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
12
Package Type: TO-220-F2 Marking: C3D06060
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Features
Typical Applications
- Optimized for PFC Boost Diode Application
- Zero Reverse Recovery Current / Forward
Recovery Voltage
- Temperature-Independent Switching Behavior
- Fully Isolated Case
- Extremely Fast Switching
- Switch Mode Power Supplies (SMPS)
- Free Wheeling Diodes in Inverter Stages
- Boost for PFC & DC-DC Stages
- Solar Inverters
- AC/DC Converters
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current
Power Dissipation
Diode dV/dt Ruggedness i2t value (Per Leg)
Symbol VRRM VDC IF
IFRM
IFSM IF,Max Ptot dV/dt ʃi2dt
Value 600 600 11.5 6 4 22 15 44 41 540 460 37 16 200 9.6 8.4...
