Datasheet Summary
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
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Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant
Ordering Part Number Package
TO 247-4
Marking C3M0016120K
Applications
- Solar inverters
- EV motor drive
- High voltage DC/DC converters
- Switched mode power supplies
- Load switch
Benefits
- Reduce switching losses and minimize gate ringing
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