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C3M0016120K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Ordering Part Number Package
C3M0016120K
TO 247-4
Marking C3M0016120K
Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies • Load switch
Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switch
C3M0016120K Datasheet
