Datasheet Summary
VDS 1200 V
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode
Features
Package
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- -
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching...
