Datasheet Summary
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
- Optimized package with separate driver source pin
- Lower profile TO-247-4 package body
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
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Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Package
Tab Drain
1 234
Typical Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
- Solar/ESS
- UPS
- Enterprise PSU Key...