Datasheet Summary
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features
- C3MTM SiC MOSFET technology
- Optimized package with separate driver source pin
- 8 mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
TO 247-4
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Package Types: TO-247-4 PN’s: C3M0015065K
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