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C3M0025065K - Silicon Carbide Power MOSFET

Key Features

  • 3rd Generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Part Number C3M0025065K Package TO 247-4 Marking C3M0025065K Typical.

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C3M0025065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Part Number C3M0025065K Package TO 247-4 Marking C3M0025065K Typical Applications • EV chargers • UPS • Solar inverters • Industrial SMPS • DC/DC converters Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency • Easy to parallel and simple to drive • Enable new hard switching PFC topologies (Totem-Pole) Key Parameters Parameter Symbol Min. Typ.