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C3M0075120J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7 mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Typical Applications
• Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch mode power supplies
TO-263-7
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package Types: TO-263-7 PN’s: C3M0075120J
Wolfspeed, Inc.
C3M0075120J Datasheet
