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C3M0075120J - Silicon Carbide Power MOSFET

Key Features

  • 3rd generation SiC MOSFET technology.
  • Low impedance package with driver source pin.
  • 7 mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Typical.

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C3M0075120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7 mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch mode power supplies TO-263-7 Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Types: TO-263-7 PN’s: C3M0075120J Wolfspeed, Inc.