C3M0075120J
Key Features
- 3rd generation SiC MOSFET technology
- Low impedance package with driver source pin
- 7 mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
