Datasheet4U Logo Datasheet4U.com

C3M0075120K-A - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 3rd generation Silicon Carbide (SiC) MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) 1 234 D SSG Wolfspeed, Inc. is in the proce.

📥 Download Datasheet

Datasheet preview – C3M0075120K-A

Datasheet Details

Part number C3M0075120K-A
Manufacturer Wolfspeed
File Size 864.71 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0075120K-A Datasheet
Additional preview pages of the C3M0075120K-A datasheet.

📁 Similar Datasheet

Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
C3M0075120K-A 1200V 75mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Drain (Pin 1, TAB) Features • 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) 1 234 D SSG Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
Published: |