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C3M0075120K - Silicon Carbide Power MOSFET

Key Features

  • 3rd generation Silicon Carbide (SiC) MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) 1 234 D SSG Wolfspeed, Inc. is in the proce.

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Other Datasheets by Wolfspeed

Part Number Description
C3M0075120K-A Silicon Carbide Power MOSFET
C3M0075120K1 Silicon Carbide Power MOSFET
C3M0075120D Silicon Carbide Power MOSFET
C3M0075120D-A Silicon Carbide Power MOSFET
C3M0075120J Silicon Carbide Power MOSFET

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C3M0075120K 1200V 75mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Drain (Pin 1, TAB) Features • 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) 1 234 D SSG Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.