C3M0075120K Description
C3M0075120K 1200V 75mohm Silicon Carbide Power MOSFET N-Channel Enhancement Mode Tab Drain Drain (Pin 1, TAB).
C3M0075120K Key Features
- 3rd generation Silicon Carbide (SiC) MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant