C3M0160120J
Key Features
- 3rd generation Solicon Carbide (SiC) MOSFET technology
- Low impedance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant 1 2 34 5 6 7 G KS S S S S S Gate (Pin
- Driver Source (Pin
