C3M0160120K1 Overview
C3M0160120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode.
C3M0160120K1 Key Features
- Optimized package with separate driver source pin
- Lower profile TO-247-4 package body
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency