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C3M0350120J - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 3rd generation Silicon Carbide (SiC) MOSFET technology.
  • Low impedance package with driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) W.

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Datasheet Details

Part number C3M0350120J
Manufacturer Wolfspeed
File Size 793.65 KB
Description Silicon Carbide Power MOSFET
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C3M0350120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • 3rd generation Silicon Carbide (SiC) MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant 1 2 34 5 6 7 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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