Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
Features
- Low forward voltage (VF) drop with positive
temperature coefficient.
- Zero reverse recovery current/forward recovery
voltage.
- Temperature-independent switching behavior.
- Low leakage current (IR)
Maximum Ratings (TC = 25 °C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Symbol VRRM VDC
Value 650 650 23
Unit V
Continuous Forward Current
IF
12
6
Repetitive Peak Forward Surge Current
25
IFRM
14
A
45 IFSM
33.
C6D06065G Datasheet
