C6D30065H Datasheet | Wolfspeed

6th Generation 650 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications. Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo. Part Number Package Marking TO-247-2 Features - Low Forward Voltage (VF) Drop with Positive Temperature Coefficient - Zero Reverse Recovery Current / Forward Recovery Voltage - Temperature-Independent Switching Behavior Typical Applications - Industrial Switched Mode Power Supplies - Uninterruptible & AUX Power Supplies - Boost for PFC & DC-DC Stages - Solar Inverters Key Parameters (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current i2t Value Power Dissipation Symbol VRRM VRSM VDC IFRM IFSM ʃ i2t Ptot Value 650 650 650 88 44 27 112 64 207 187 214 175 227...