CGH55015F2 - GaN HEMT

Wolfspeed

General Description

Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers.

Key Features

4.5 to 6.0 GHz Operation.
12 dB Small Signal Gain at 5.65 GHz.
13 W typical PSAT.
60% Efficiency at PSAT.
28 V Operation.

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CGH55015F2 gan hemt by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	CGH55015F2
Manufacturer	Wolfspeed
File Size	3.81 MB
Description	GaN HEMT
Datasheet	CGH55015F2 Datasheet

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Full PDF Text Transcription (Reference)

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CGH55015F2/P2 10 W, C-Band, Unmatched, GaN HEMT Description Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screwdown, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F2/P2 is suitable for applications up to 6 GHz. Package Types: 440196 & 440166 PNs: CGH55015P2 & CGH55015F2 Features • 4.5 to 6.0 GHz Operation • 12 dB Small Signal Gain at 5.