CGHV96130F Description
Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in parison to other technologies. GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
CGHV96130F Key Features
- 9.6 GHz Operation
- 42% Typical PAE
- 50 Ohm Internally Matched
- <0.3 dB Power Droop