CGHV96130F
Overview
Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
- 8.4 - 9.6 GHz Operation *
- 166 W POUT typical 7.5 dB Power Gain
- 42% Typical PAE
- 50 Ohm Internally Matched
- <0.3 dB Power Droop
