CGHV96130F Datasheet

The CGHV96130F is a GaN HEMT.

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Part NumberCGHV96130F
ManufacturerWolfspeed
Overview Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency .
* 8.4 - 9.6 GHz Operation
*
* 166 W POUT typical 7.5 dB Power Gain
* 42% Typical PAE
* 50 Ohm Internally Matched
* <0.3 dB Power Droop Applications
* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port Security Large Signal Models Available for AD.
Part NumberCGHV96130F
Description130W GaN Amplifier
ManufacturerMACOM Technology Solutions
Overview The CGHV96130F is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or .
* 8.4 - 9.6 GHz Operation
* 166 W POUT typical
* 7.5 dB Power Gain
* 42% Typical PAE
* 50 Ohm Internally Matched
* <0.3 dB Power Droop Applications
* Marine Radar
* Weather Monitoring
* Air Traffic Control
* Maritime Vessel Traffic Control
* Port Security Large Signal Models Available for ADS and .