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CHB011M12GM4 - T-Type Module

Key Features

  • Gen4 Technology with Soft Body Diode VDS 1200 V R 5 4 DS(on) 311 mΩ 2 1 D D S14 G14 CD G13 S13 G11 S11 DC+ M11 C MID PH C M14 M13 M12 T1 -t° G12 S12 T2 DC- Typical.

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Part Number Description
CHB011M12GM4T T-Type Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHB011M12GM4, CHB011M12GM4T 1200 V, 11 mΩ, Silicon Carbide, T-Type Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material • Features Gen4 Technology with Soft Body Diode VDS 1200 V R 5 4 DS(on) 311 mΩ 2 1 D D S14 G14 CD G13 S13 G11 S11 DC+ M11 C MID PH C M14 M13 M12 T1 -t° G12 S12 T2 DC- Typical Applications • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation B System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching & Conduction LosseAs of SiC • Reduced Thermal Requirements and System Cost