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CHB011M12GM4, CHB011M12GM4T
1200 V, 11 mΩ, Silicon Carbide, T-Type Module
Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material • Features Gen4 Technology with Soft Body Diode
VDS
1200 V
R 5
4
DS(on)
311 mΩ 2
1
D
D
S14 G14
CD G13 S13 G11 S11
DC+ M11
C
MID
PH
C
M14
M13
M12
T1
-t°
G12
S12
T2
DC-
Typical Applications • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation
B
System Benefits
• Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching
& Conduction LosseAs of SiC
• Reduced Thermal Requirements and System Cost