CMPA601C025D Overview
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties pared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN...
CMPA601C025D Key Features
- 32 dB Small Signal Gain
- High Breakdown Voltage
- High Temperature Operation
- Size 0.172 x 0.239 x 0.004 inches
