Full PDF Text Transcription for CMPA601C025F (Reference)
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CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwa...
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GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. PaPcNka: gCeMTPyAp6e0: 414C0022153F Typical Performance Over 6.0-12.0 GHz (TC = 25˚C) Parameter 6.0 GHz 7.
CMPA601C025F Datasheet
