CMPA601C025F Description
The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package.
CMPA601C025F Key Features
- 34 dB Small Signal Gain
- High Breakdown Voltage
- High Temperature Operation
- Size 0.172 x 0.239 x 0.004 inches