CMPA601C025F
CMPA601C025F is Power Amplifier manufactured by Wolfspeed.
Description
The CMPA601C025F is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (Si C) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The Ga N HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms.
PN: CMPA601C025F Package Type: 440213
Typical Performance Over 6.0-12.0 GHz (TC = 25˚C)
Parameter Small Signal Gain POUT @ PIN = 22 d Bm Power Gain @ PIN = 22 d Bm PAE @ PIN = 22 d Bm
6.0 GHz 35 34 23 21
7.5 GHz 34 51 25 36
Note: All data CW
9.0 GHz 34 49 25 35
10.5 GHz 37 45.9 25 33
12.0 GHz 31 36.5 23.5 27
Units d B W d B %
Features
- 34 d B Small Signal Gain
- -
40 W Typical PSAT Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.172 x 0.239 x 0.004 inches
Applications
- Jamming Amplifiers
- Test Equipment Amplifiers
- Broadband Amplifiers
Rev 4.1
- April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature1 Screw Torque
-10, +2
TSTG
-40, +150
IGMAX
TSTG...
