CMPA801B030F Overview
Wolfspeed’s CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors.
CMPA801B030F Key Features
- 11.0 GHz Operation
- 37 W POUT typical
- 16 dB Power gain
- 36% Typical PAE
- 50 Ohm internally matched
