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CMPA801B030F - Power Amplifier

General Description

Wolfspeed’s CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 8.0 - 11.0 GHz Operation.
  • 37 W POUT typical.
  • 16 dB Power gain.
  • 36% Typical PAE.
  • 50 Ohm internally matched.

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Full PDF Text Transcription for CMPA801B030F (Reference)

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CMPA801B030F 30 W, 8.0 – 11.0 GHz, GaN MMIC, Power Amplifiers Description Wolfspeed’s CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) bas...

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s a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance. PN : CMPA801B030F Package Type : 440213 Features • 8.0 - 11.

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