Datasheet4U Logo Datasheet4U.com

CMPA801B030F1 - Power Amplifier

General Description

The CMPA801B030F1 is a packaged, 35 W HPA utilizing the high performance, 0.15 um GaN on SiC production process.

The CMPA801B030F1 operates from 8 - 12 GHz and targets pulsed radar systems supporting both defense and commercial applications.

Key Features

  • 35 W typical PSAT.
  • >36% typical power added efficiency.
  • 19 dB large signal gain.
  • High temperature operation.

📥 Download Datasheet

Full PDF Text Transcription for CMPA801B030F1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMPA801B030F1. For precise diagrams, and layout, please refer to the original PDF.

CMPA801B030F1 35 W, 8.0 - 12.0 GHz, GaN MMIC, Power Amplifier Description The CMPA801B030F1 is a packaged, 35 W HPA utilizing the high performance, 0.15 um GaN on SiC pro...

View more extracted text
kaged, 35 W HPA utilizing the high performance, 0.15 um GaN on SiC production process. The CMPA801B030F1 operates from 8 - 12 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high performance amplifier provides 19 dB of large signal gain and 35% efficiency to support lower system DC power requirements and simplify system thermal management solutions. Packaged in a bolt-down, flange package, the CMPA801B030F1 also supports superior thermal management to allow for simplified system cooling requirements.