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CMPA801B030S - GaN MMIC Power Amplifier

General Description

Cree’s CMPA801B030S is a packaged, 40W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process.

The CMPA801B030S operates from 7.9-11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications.

Key Features

  • Freq: 7.9.
  • 11.0 GHz.
  • Psat: 40 W.
  • PAE: 40%.
  • LS Gain: 20 dB.
  • 7x7 mm Overmold QFN.
  • Lower system costs.
  • Reduced board area Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details.

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CMPA801B030S 7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier Description Cree’s CMPA801B030S is a packaged, 40W HPA utilizing Cree’s high performance, 0.15um GaN ...

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is a packaged, 40W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA801B030S operates from 7.9-11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high performance amplifier provides 20dB of large signal gain and 40% efficiency to support lower system DC power requirements and simplify system thermal management solutions. Packaged in a 7x7 mm plastic overmold QFN, the CMPA801B030S also supports reduced board space requirements and high-throughput manufacturing lines. PN: CMPA801B030S Package Type: 7x7 QFN Typical Per