CMPA801B030D Overview
Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors.
CMPA801B030D Key Features
- 28 dB Small Signal Gain
- High Breakdown Voltage
- High Temperature Operation
- Size 0.142 x 0.188 x 0.004 inches
CMPA801B030D Applications
- Point to Point Radio
