Full PDF Text Transcription for CMPA801B030D (Reference)
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CMPA801B030D 30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based mon...
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llium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 8.0-11.0 GHz (TC = 85˚C) Parameter 8.0 GHz 8.
CMPA801B030D Datasheet
