Datasheet4U Logo Datasheet4U.com

CPM3-1700-R020E - SiC Gen 3 MOSFET

General Description

This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design.

Key Features

  • Enhanced 3rd Generation SiC MOSFET.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitance.
  • Fast intrinsic diode with low reverse recovery.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CPM3-1200-0075A Silicon Carbide Power MOSFET CREE
CPM-2F peltier cooling unit CUI
CPM-2H PELTIER COOLING UNIT CUI
CPM2-1200-0025B Silicon Carbide Power MOSFET Cree
CPM2-1200-0040A Silicon Carbide Power MOSFET Cree

Other Datasheets by Wolfspeed

Part Number Description
CPM3-1200-0013A SiC Gen 3 MOSFET
CPM3-1200-0016A SiC Gen 3 MOSFET
CPM3-1200-0021A SiC Gen 3 MOSFET
CPM3-1200-0075A SiC Gen 3 MOSFET
CPM3-1200-0160A SiC Gen 3 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CPM3-1700-R020E. 1 CPM3-1700-R020E Wolfspeed SiC Gen 3 MOSFET Description This is the Wolfspeed’s 3rd generation of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for high frequency switching application including industrial inverters and UPS Features • Enhanced 3rd Generation SiC MOSFET • High blocking voltage with low on-resistance • High speed switching with low capacitance • Fast intrinsic diode with low reverse recovery Applications • EV Chargers • UPS • Inverters • DC/DC Converters Absolute Maximum Ratings Stress beyond those listed under absolute maximum ratings may damage the device.