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CPW6-1700-Z050A - Gen 6 Silicon Carbide Schottky Diode

General Description

This is the 6th generation of high voltage, high performace Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design.

Key Features

  • 1700V Schottky Rectifier.
  • Zero Reverse Recovery.
  • Zero Forward Recovery.
  • High-Frequency Operation.
  • Temperature-Independent Switching Behavior.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF.

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Full PDF Text Transcription for CPW6-1700-Z050A (Reference)

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CPW6-1700-Z050A Gen 6 Silicon Carbide Schottky Diode Description This is the 6th generation of high voltage, high performace Z-Rec© silicon carbide Schottky diode in a pa...

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voltage, high performace Z-Rec© silicon carbide Schottky diode in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this schottky diode ideal for high frequency switching applications including high density DC to DC converters. This schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.