E3M0021120J2 Overview
Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 4.7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
- Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Tab Drain 1234567
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
