E3M0060065K
Overview
- 3rd generation SiC MOSFET technology Tab
- Optimized package with separate driver source pin Drain
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances *
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
- Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Drain (Pin 1, TAB)
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
