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E3M0160120D
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
• Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Package
1 23
Applications • EV Battery Chargers • High Voltage DC/DC Converters
Part Number
Package
Marking
E3M0160120D
TO-247-3L
E3M0160120D
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
VDSmax VGSmax
Drain - Source Voltage Gate - Source Voltage
Paramete
E3M0160120D Datasheet
