E3M0160120D Description
E3M0160120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode.
E3M0160120D Key Features
- 3rd generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Automotive Qualified (AEC-Q101) and PPAP Capable
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency