E4M0060075K1 Overview
E4M0060075K1 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode.
E4M0060075K1 Key Features
- Optimized package with separate driver source pin
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Automotive Qualified (AEC-Q101) and PPAP Capable
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency