E6D10065G Datasheet | Wolfspeed

E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications. Part Number E6D10065G Tab - CASE PIN PIN Package TO-263-2 Marking E6D10065G Features - Low Forward Voltage (VF) Drop with Positive Temperature Coefficient - Zero Reverse Recovery Current / Forward Recovery Voltage - Temperature-Independent Switching Behavior - Automotive Qualified (AEC Q101) and PPAP Capable Typical Applications - Interleaved or Bridgless PFC - DC/DC On Board Battery Chargers - Boost for PFC & DC-DC Stages - AC/DC On Board Chargers - PFC Output Rectification Maximum Ratings (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Power Dissipation i2t value Symbol VRRM VRSM...