Datasheet Summary
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010
- 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
PTFB201402FC Package H-37248-4
Power Gain (dB) Input Return Loss (dB)
Small Signal CW Gain & Input Return Loss, single side
VDD = 28 V, IDQ = 650 mA
21.0 20.5 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0
Gain
Frequency (MHz)
0 -2 -4 -6 -8...
