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PTFB201402FC - High Power RF LDMOS Field Effect Transistor

Product Overview

Wolfspeed

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PTFB201402FC High Power RF LDMOS Field Effect Transistor by Wolfspeed - Datasheet Preview — Datasheet preview – PTFB201402FC

Datasheet Details

Part number	PTFB201402FC
Manufacturer	Wolfspeed
File Size	442.98 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB201402FC Datasheet
Additional preview pages of the PTFB201402FC datasheet.

Product details

Description

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.

It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band.

Features

Broadband internal matching.
Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%.
Integrated ESD protection.
Excellent thermal stability.
Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s.

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Published: Jun 28, 2019 |