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PTFB201402FC

PTFB201402FC is High Power RF LDMOS Field Effect Transistor manufactured by Wolfspeed.
PTFB201402FC datasheet preview

PTFB201402FC Details

Part number PTFB201402FC
Datasheet PTFB201402FC Datasheet PDF (Download)
File Size 442.98 KB
Manufacturer Wolfspeed
Description High Power RF LDMOS Field Effect Transistor
PTFB201402FC page 2 PTFB201402FC page 3

PTFB201402FC Overview

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.

PTFB201402FC Key Features

  • Broadband internal matching
  • Typical CW performance, 28 V, single side
  • Output power, P1dB = 70 W
  • Efficiency = 56%
  • Integrated ESD protection
  • Excellent thermal stability
  • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s

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