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W2XN021 - High Frequency Amplifier Ambient Rated Bipolar Transistor

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Part number W2XN021
Manufacturer XINSUN
File Size 301.27 KB
Description High Frequency Amplifier Ambient Rated Bipolar Transistor
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W2XN021 XS-W-039 15-A5-06 1/3 1 1.1 W2XN021 。 1.2 ● ● 2 (mm×mm) (µm) *(µm) (µm2) (µm) (mm) () 0.74×0.74 220±20 40 120×140 120×140 Si3N4 3.0±0.5 φ125 () ;φ42μm;E、B * : :。 : 275 :http://www.xinshun.cn :(0510)86851182 86852109 :(0510)86851532 W2XN021 XS-W-039 15-A5-06 2/3 3 (、) 3.1 ,Tamb= 25℃ - VCB0 50 - VCE0 40 - VEB0 5 IC 2 (Tamb=25℃) Ptot 0.9 Tj 150 Tstg -55~150 V V V A W ℃ ℃ :TO-92L :3DG8051 3.2 ,Tamb= 25℃ - ICB0 VCB=50V, IE=0 - IEB0 VEB=5V ,IC=0 hFE VCE = 2V, IC= 500mA - VCEsat IC=1A, IB=100mA fT VCE=10V, IC=50mA f=100MHz 3.3 0.6 V -I CEsat C 0.1 μA 0.1 μA 100 320 1 V 150 MHz COLLECTOR-EMITTER SATURATION VOLTAGE V (V) CEsat 0.5 0.4 0.
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