XNA6N60T
XNA6N60T is Trench-FS IGBT manufactured by Xiner.
Features
- Advanced Trench+FS (Field Stop) IGBT technology
- Low Collector-Emitter Saturation voltage, typical data is 2.1V @ 6A.
- Easy parallel switching capability due to positive
Temperature coefficient in Vce.
- 10u S Short-Circuit
- Fast switching
- High input impedance
- Pb- Free product
Schematic Diagram
Applications
- Home applications
- Intelligent power module.
D2pak
Symbol
V(BR)CES
VCE(sat)
VGE(th) VF IGES
IGESR ICES
Electrical characteristics(TJ = 25°C unless otherwise noted)
Parameter
Collector
- Emitter breakdown voltage
Collector-Emitter Saturation voltage
Gate threshold voltage
Diode forward voltage
Gate to Emitter Forward Leakage
Gate to Emitter reverse Leakage
Zero gate voltage collector current
Test conditions Units Min.
VGE = 0V, ID =250u A
VGE=15V, IC=6A,TC=25°C
VGE=15V, IC=6A,TC=150°C
VGE= VCE, Ic = 0.25m A
IF=6A,TC=25°C
IF=6A,TC=150°C
- V
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