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XNS21765 - IPM

General Description

XNS21765Trench FS-IGBT，，。 XNS21765 is an Advanced IPM Based on Trench FS-IGBT Technology as a Compact and High Performance Inverter or Server Solution for Higher Power Consumption and Industrial Applications.

XNS21765（EMI）。 XNS21765

Key Features

  • Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance.
  • XNS21765IGBT，。 XNS21765 Combines Optimized Circuit Protection and Drive Matched to Low-Loss IGBTs. System Reliability is Further Enhanced by the Integrated Under-Voltage Lock-Out and Short-Circuit Protection.
  • XNS21765HVIC，IGBT，。 XNS21765 Combines High Speed HVIC Provides Opto-Coupler-Less Single-Supply IGBT Gate Driving Capability that Further Reduce the Overal.

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Datasheet Details

Part number XNS21765
Manufacturer Xiner
File Size 442.25 KB
Description IPM
Datasheet download datasheet XNS21765 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Xiner / Technical Information XNS21765 / IPM /Description  XNS21765Trench FS-IGBT，，。 XNS21765 is an Advanced IPM Based on Trench FS-IGBT Technology as a Compact and High Performance Inverter or Server Solution for Higher Power Consumption and Industrial Applications.  XNS21765（EMI）。 XNS21765 Features Low Electromagnetic Interference (EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance.  XNS21765IGBT，。 XNS21765 Combines Optimized Circuit Protection and Drive Matched to Low-Loss IGBTs. System Reliability is Further Enhanced by the Integrated Under-Voltage Lock-Out and Short-Circuit Protection.