• Part: XP10N2R5S6
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: YAGEO
  • Size: 256.56 KB
Download XP10N2R5S6 Datasheet PDF
YAGEO
XP10N2R5S6
XP10N2R5S6 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description AXP41600N42Rs5eriseesrieasrearfreominn Aodvvaatendceddes Pigonwearndinnsoilvicaotendprdoecseigsns atencdhnsoililcoogny ptoroaccehsisevteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde ofans-tresswisitcahnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt edxetvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. The TO-22603 package is widely preferred for all mercialindustrial stuhrrfoaucgeh mohuonlet aapppplilcicaatitoionnss.usi Tnhge inflroawredthreerfmloawl rtecshisntaiqnucee aanndd slouwitepdafcokragheighcocsut rrceonnttraibpuptelicatotiothnedwueorltdowtihde ploowpucloanrnpeacctkioangere. sistance. BVDSS RDS(ON) 100V 2.5mΩ TO-263-6L D GSS SSS Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range +20 320 m J -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 0.55 40 Units ℃/W ℃/W 1 202311231YAGEO Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold...