XP10N3R8P Datasheet | YAGEO

Description AXP41600N43Rs8eriseesrieasrearfreominn Aodvvaatendceddes Pigonwearndinnsoilvicaotendprdoecseigsns atencdhnsoililcoogny ptoroaccehsisevteechthneolologwyetsot apcohsiseivbelethoen-lroewseisstat npcoessaibnlde ofans-tresswisitcahnicneg apnedrfofarmstasnwceitc. h Iitnpgropveirdfoersmtahneced.e Istigpnreorvidweitsh thaen deextsriegmneer ewffiitchieannt edxetvriecme efoerffuicsientindeaviwceideforraunsgee inof apowwideer raapnpgliecaotfiopnosw. er applications. TO-220(P) The TO-220 package is widely preferred for all mercial- i Tnhdeus Ttr Oia-l220thrpoaucgkhagehoisle widaeplpylicparetiofenrsre. d Tfohrealllocwommtheerrcmiaal-l rinedsuisstatrniacle athnrdoulogwh phaockleageapcpolsictactioonntsri.but Teheto thloewwotrhldewrmidael preospisutlanr cpeacaknadgelo. w package cost contribute to the worldwide popular package. Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units Drain-Source Voltage Gate-Source Voltage +20 ID@TC=25℃ Drain Current, VGS @ 10V4(Silicon Limited) ID@TC=25℃ Drain Current, VGS @ 10V4(Package Limited) ID@TC=100℃ Drain Current, VGS @ 10V Pulsed Drain Current1 PD@TC=25℃ Total Power Dissipation PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy3 211 m J TSTG Storage Temperature Range -55 to...